例句與造句

1. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software . the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately . the maximum power density of 4h - sic mesfet is as high as 19 . 22w / mm . at the same time , the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed .
   論文分析建立了4h - sicmosfet和mesfet器件的結(jié)構(gòu)模型和物理模型，采用二維器件模擬軟件medici對4h - sicmosfet和mesfet的輸出特性進(jìn)行了模擬分析，研究了溫度和結(jié)構(gòu)參數(shù)對器件特性的影響，表明兩種器件的擊穿特性均沒有負(fù)阻現(xiàn)象，擊穿電壓分別達(dá)到85v和209v ，由此得到4h - sicmesfet最大功率密度可達(dá)到19 . 22w mm ；同時，研究了sic場效應(yīng)晶體管的制作工藝，初步得到了一套制造sicmosfet器件的制造工藝流程，研制出了4h - sicmosfet器件。
2. It's difficult to find maximum power density in a sentence. 用maximum power density造句挺難的